Die Siliziumnitrid-Substrat-Technologie von Zhengtian New Materials hat das internationale Spitzenniveau erreicht
With the development of integrated circuits, the integration level and power density of semiconductor devices have significantly increased. Consequently, the heat generated by corresponding operations has dramatically risen. According to statistics, as high as 55% of high-power device failures are caused by heat. To address the heat dissipation issue in circuits, it is essential to […]